The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 2021
Filed:
Apr. 16, 2019
Applicant:
National Central University, Taoyuan, TW;
Inventor:
Jin-Wei Shi, Taoyuan, TW;
Assignee:
National Central University, Taoyuan, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/18 (2006.01); H01L 31/0687 (2012.01);
U.S. Cl.
CPC ...
H01L 31/1852 (2013.01); H01L 31/06875 (2013.01);
Abstract
A method of is provided as a process of substrate lift-off. The present invention is mainly used for a group III-V solar cell, which has the highest power generation efficiency. An original sacrificial layer is changed into an AlAs oxide layer, which is transformed into an AlOsacrificial layer after wet oxidation. The sacrificial layer is then soaked in an oxide-relief solution for etching. Thus, the lift-off process of a GaAs substrate can be harmlessly processed to the complex group III-V solar cell. The GaAs substrate can be recycled to be effectively further reused in photovoltaic devices with reduced cost.