The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 2021
Filed:
Jan. 29, 2020
Research & Business Foundation Sungkyunkwan University, Suwon-si, KR;
Geun Young Yeom, Seoul, KR;
Ki Seok Kim, Incheon, KR;
Ki Hyun Kim, Daejeon, KR;
Jin Woo Park, Goyang-si, KR;
Doo San Kim, Suncheon-si, KR;
You Jin Ji, Gunpo-si, KR;
Ji Young Byun, Suwon-si, KR;
JiEun Kang, Yongin-si, KR;
Research & Business Foundation Sungkyunkwan University, Suwon-si, KR;
Abstract
The present disclosure relates to a semiconductor device and a photoelectronic device, both including a transition-metal dichalcogenide thin-film, and to a method for producing a transition-metal dichalcogenide thin-film. The transition-metal dichalcogenide thin-film includes: a first region including a stack of N+M transition-metal dichalcogenide molecular layers; and a second region including a stack of N transition-metal dichalcogenide molecular layers, wherein the second region is horizontally adjacent to the first region, wherein the N transition-metal dichalcogenide molecular layers of the second region respectively horizontally extend from the N transition-metal dichalcogenide molecular layers of the first region.