The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 2021
Filed:
Jun. 28, 2018
Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;
Shunpei Yamazaki, Setagaya, JP;
Masashi Tsubuku, Atsugi, JP;
Kengo Akimoto, Atsugi, JP;
Hiroki Ohara, Sagamihara, JP;
Tatsuya Honda, Nigata, JP;
Takatsugu Omata, Isehara, JP;
Yusuke Nonaka, Atsugi, JP;
Masahiro Takahashi, Atsugi, JP;
Akiharu Miyanaga, Tochigi, JP;
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;
Abstract
An oxide semiconductor film which has more stable electric conductivity is provided. The oxide semiconductor film comprises a crystalline region. The oxide semiconductor film has a first peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.4 nmand less than or equal to 0.7 nmin a region where a magnitude of a scattering vector is greater than or equal to 3.3 nmand less than or equal to 4.1 nm. The oxide semiconductor film has a second peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.45 nmand less than or equal to 1.4 nmin a region where a magnitude of a scattering vector is greater than or equal to 5.5 nmand less than or equal to 7.1 nm.