The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 2021
Filed:
Jan. 07, 2019
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Keiko Kawamura, Yokohama Kanagawa, JP;
Tsuneo Ogura, Kamakura Kanagawa, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Abstract
A semiconductor device includes a first electrode, a second electrode disposed at a position opposing the first electrode, and a semiconductor body provided between the first electrode and the second electrode. The semiconductor body includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type and a third semiconductor layer of the second conductivity type; the second semiconductor layer is provided between the first semiconductor layer and the first electrode; and the third semiconductor layer is selectively provided inside the first semiconductor layer and disposed at a position separated from the second semiconductor layer. The first electrode is electrically connected to the second semiconductor layer and includes an extension portion; and the extension portion pierces the second semiconductor layer, extends in a first direction toward the second electrode, and is connected to the third semiconductor layer.