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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10916627 B1

PDFFull Text
Date of Patent:
Feb. 09, 2021

Filed:

Mar. 22, 2019

Nanosheet transistor with fully isolated source and drain regions and spacer pinch off

Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Nicolas Loubet, Guilderland, NY (US);

Pietro Montanini, Albany, NY (US);

Assignee:

INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);

Attorneys:

Cantor Colburn LLP

Douglas Pearson

Primary Examiner:

Zandra V Smith

Assistant Examiner:

Molly K Reida

Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 21/8234 (2006.01); H01L 29/66 (2006.01); H01L 29/161 (2006.01); H01L 21/033 (2006.01); H01L 21/02 (2006.01); H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0673 (2013.01); H01L 21/02532 (2013.01); H01L 21/0337 (2013.01); H01L 21/823412 (2013.01); H01L 21/823418 (2013.01); H01L 21/823431 (2013.01); H01L 21/823437 (2013.01); H01L 27/0886 (2013.01); H01L 29/0642 (2013.01); H01L 29/161 (2013.01); H01L 29/6681 (2013.01); H01L 29/66545 (2013.01); H01L 29/785 (2013.01);
Abstract

A semiconductor device includes a plurality of nano sheet stacks disposed above a substrate. Each nanosheet stack has a first nanosheet and a first sacrificial layer, the first nanosheet and the first sacrificial layer each include a first end and a second end. The first end and the second end of the first sacrificial layer are recessed from the first and second ends of the first nanosheet. Each nanosheet stack has a bottom sacrificial layer formed on top of the substrate. The bottom sacrificial layer has a first end and a second end, which are recessed from the first and second ends of the first nanosheet. The semiconductor also has a source or drain (S/D) structures formed in contact with the first end and the second end of the first nanosheet. The S/D structures are isolated from the substrate by the bottom sacrificial layer.

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