The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 2021
Filed:
Jun. 17, 2019
Samsung Electronics Co., Ltd., Suwon-si, KR;
Tae Yon Lee, Seoul, KR;
Chang Hwa Kim, Hwaseong-si, KR;
Jae Ho Kim, Seoul, KR;
Sang Chun Park, Seoul, KR;
Gwi Deok Ryan Lee, Suwon-si, KR;
Beom Suk Lee, Yongin-si, KR;
Jae Kyu Lee, Seongnam-si, KR;
Kazunori Kakehi, Seongnam-si, KR;
Abstract
An image sensor includes a first organic photoelectric conversion layer on a base layer, a floating diffusion region in the base layer, a first storage node including a first electrode layer, which is configured to receive a bias signal, a first portion of a first semiconductor layer which includes a semiconductor material, and a first portion of a first dielectric layer. The first dielectric layer extends between the first electrode layer and the first semiconductor layer. The first storage node is electrically connected to the first organic photoelectric conversion layer. The image sensor includes a first transfer transistor including the first dielectric layer, the first semiconductor layer, and a first transfer gate electrode which is configured to receive first transfer control signal. The first transfer transistor has a first end electrically connected to the first storage node and a second end electrically connected to the floating diffusion region.