The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 09, 2021

Filed:

Nov. 13, 2018
Applicant:

Newport Fab, Llc, Newport Beach, CA (US);

Inventors:

Nabil El-Hinnawy, Irvine, CA (US);

Paul D. Hurwitz, Irvine, CA (US);

Gregory P. Slovin, Irvine, CA (US);

Jefferson E. Rose, Hawthorne, CA (US);

Roda Kanawati, Irvine, CA (US);

David J. Howard, Irvine, CA (US);

Assignee:

Newport Fab, LLC, Newport Beach, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/24 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/2481 (2013.01); H01L 45/06 (2013.01); H01L 45/1286 (2013.01); H01L 45/143 (2013.01); H01L 45/144 (2013.01);
Abstract

A radio frequency (RF) switching circuit includes stacked phase-change material (PCM) RF switches. The stacked PCM RF switches can include a high shunt capacitance PCM RF switch having its heating element contacts near its PCM contacts, and a low shunt capacitance PCM RF switch having its heating element contacts far from its PCM contacts. An RF voltage is substantially uniformly distributed between the high shunt capacitance PCM RF switch and the low shunt capacitance PCM RF switch. The stacked PCM RF switches can also include a wide heating element PCM RF switch having a large PCM active segment, and a narrow heating element PCM RF switch having a small PCM active segment. The wide heating element PCM RF switch will have a higher breakdown voltage than the narrow heating element PCM RF switch.


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