The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 2021
Filed:
Feb. 14, 2019
Applicant:
Canon Kabushiki Kaisha, Tokyo, JP;
Inventors:
Takahiro Suzuki, Kawasaki, JP;
Yoshiei Tanaka, Hachioji, JP;
Tsutomu Tange, Yokohama, JP;
Katsunori Hirota, Yamato, JP;
Assignee:
CANON KABUSHIKI KAISHA, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1462 (2013.01); H01L 27/14612 (2013.01); H01L 27/14685 (2013.01);
Abstract
An imaging device includes a substrate including a photoelectric conversion portion and an insulating layer formed to cover at least a part of the photoelectric conversion portion. The insulating layer contains silicon, nitrogen, and chlorine. In an embodiment, in at least a part of the insulating layer, a ratio of silicon atoms bonded to one, two, or three nitrogen atoms and not bonded to an oxygen atom is not more than 20% in silicon atoms contained in at least the part.