The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 2021
Filed:
Apr. 26, 2019
Samsung Electronics Co., Ltd., Suwon-si, KR;
Seung Seok Ha, Hwaseong-si, KR;
Kyoung-Mi Park, Yongin-si, KR;
Hyun-Seung Song, Hwaseong-si, KR;
Keon Yong Cheon, Yongin-si, KR;
Dae Won Ha, Seoul, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A semiconductor device includes a first fin pattern and a second fin pattern in a NMOS region, each extending lengthwise along a first direction and separated by a first trench and a third fin pattern and a fourth fin pattern in a PMOS region, each extending lengthwise along the first direction in parallel with respective ones of the first fin pattern and the second fin pattern and separated by a second trench. First and second isolation layers are disposed in the first and second trenches, respectively. A first gate electrode extends lengthwise along a second direction transverse to the first direction and crosses the first fin pattern. A second gate electrode extends lengthwise along the second direction and crosses the second fin pattern. Spaced apart third and fourth gate electrodes extend lengthwise along the second direction on the second isolation layer.