The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 2021
Filed:
Feb. 27, 2020
Attopsemi Technology, Co., Ltd, Hsinchu, TW;
Shine C. Chung, San Jose, CA (US);
Attopsemi Technology Co., LTD, Hsinchu, TW;
Abstract
Programmable resistive memory can be fabricated with a non-single-crystalline silicon formed on a flexible substrate. The non-single-crystalline silicon can be amorphous silicon, low-temperature polysilicon (LTPS), organic semiconductor, or metal oxide semiconductor. The flexible substrate can be glass, plastics, paper, metal, paper, or any kinds of flexible film. The programmable resistive memory can be PCRAM, RRAM, MRAM, or OTP. The OTP element can be a silicon, polysilicon, organic or metal oxide electrode. The selector in a programmable resistive memory can be a MOS or diode with top gate, bottom gate, inverted, staggered, or coplanar structures.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile