The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 09, 2021

Filed:

Jan. 31, 2020
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Seung Woo Yu, Suwon-si, KR;

Sang Lok Kim, Seoul, KR;

Byung Kwan Chun, Seoul, KR;

Byung Hoon Jeong, Gyeonggi-Do, KR;

Jeong Don Ihm, Seongnam-si, KR;

Young Don Choi, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/32 (2006.01); G11C 7/10 (2006.01); G11C 7/22 (2006.01);
U.S. Cl.
CPC ...
G11C 16/32 (2013.01); G11C 7/1012 (2013.01); G11C 7/1078 (2013.01); G11C 7/22 (2013.01);
Abstract

A nonvolatile memory device includes a first memory cell array, a first bi-directional multiplexer, a first register, a second register, a first I/O pad and a second I/O pad. The first memory cell array stores first data. The first bi-directional multiplexer receives the first data and distributes the first data into first sub-data and second sub-data. The first register stores first sub-data from the first bi-directional multiplexer. The second register stores second sub-data from a second bi-directional multiplexer. The first I/O pad outputs the first sub-data from the first register to outside. The second I/O pad outputs the second sub-data from the second register to the outside.


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