The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 09, 2021

Filed:

Feb. 19, 2019
Applicant:

Gigadevice Semiconductor (Beijing) Inc., Beijing, CN;

Inventor:

Minyi Chen, Beijing, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 29/00 (2006.01); G11C 16/26 (2006.01); G11C 16/04 (2006.01); G11C 16/08 (2006.01); G11C 29/52 (2006.01); G06F 11/10 (2006.01); G11C 11/56 (2006.01);
U.S. Cl.
CPC ...
G11C 16/26 (2013.01); G06F 11/1068 (2013.01); G11C 16/0483 (2013.01); G11C 16/08 (2013.01); G11C 29/52 (2013.01); G11C 11/5642 (2013.01); G11C 11/5671 (2013.01);
Abstract

Provided are a flash memory and an operation method thereof. The flash memory includes a memory cell array, a controller and a register. The register stores read parameters that include a read voltage value and a read pass voltage value. The controller is configured to perform the read operation on a selected page according to the read parameters to read out the raw data stored in the selected page, determine whether the raw data includes an error bit, and in response to determining that the raw data includes the error bit, update the read parameters by decreasing the read voltage value and/or increasing the read pass voltage value.


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