The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 09, 2021
Filed:
Sep. 03, 2019
Toshiba Memory Corporation, Tokyo, JP;
Koji Kohara, Kanagawa, JP;
TOSHIBA MEMORY CORPORATION, Tokyo, JP;
Abstract
A semiconductor storage device comprises a memory cell, a write word line and a read word line connected to the memory cell, first and second write bit lines connected to the memory cell, first and second read bit lines connected to the memory cell, a precharge circuit, and a sense amplifier circuit. The precharge circuit is configured to charge, before reading from the memory cell, the first read bit line to a first potential and the second read bit line to a second potential lower than the first potential. The sense amplifier circuit is configured to amplify a difference in potential between the first read bit line and the second read bit line during the reading from the memory cell and output a signal corresponding to the difference in potential as a read value.