The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 09, 2021

Filed:

Nov. 14, 2019
Applicant:

Shanghai Huali Integrated Circuit Mfg. Co., Ltd., Shanghai, CN;

Inventor:

Xiaojun Zhou, Shanghai, CN;

Assignee:

Other;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 11/412 (2006.01); H01L 27/11 (2006.01); G11C 11/419 (2006.01);
U.S. Cl.
CPC ...
G11C 11/412 (2013.01); G11C 11/419 (2013.01); H01L 27/1104 (2013.01);
Abstract

The present disclosure provides a semiconductor structure and a method of fabricating the same, the semiconductor structure being a dual port static random access memory cell, the memory cell comprising a plurality of transistors, the plurality of transistors including a first pull-down transistor and a second pull-down transistor, the first pull-down transistor includes a plurality of first pull-down sub-transistors connected in parallel, the second pull-down transistor includes a plurality of second pull-down sub-transistors connected in parallel, plurality of gates of the plurality of first pull-down sub-transistors are parallel to each other, plurality of gates of the plurality of second pull-down sub-transistors are parallel to each other.


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