The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 2021
Filed:
May. 05, 2020
Applicant:
Murata Manufacturing Co., Ltd., Kyoto, JP;
Inventor:
Takashi Soga, Kyoto, JP;
Assignee:
Murata Manufacturing Co., Ltd., Kyoto, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/19 (2006.01); H03F 1/02 (2006.01); H03F 3/21 (2006.01); H03F 1/30 (2006.01); H03F 1/32 (2006.01); H03F 3/24 (2006.01);
U.S. Cl.
CPC ...
H03F 1/0205 (2013.01); H03F 1/02 (2013.01); H03F 1/0261 (2013.01); H03F 1/302 (2013.01); H03F 1/32 (2013.01); H03F 3/19 (2013.01); H03F 3/21 (2013.01); H03F 3/245 (2013.01); H03F 2200/165 (2013.01); H03F 2200/451 (2013.01);
Abstract
A bias circuit includes first and second bipolar transistors, first and second field-effect transistors, and a filter circuit. The first field-effect transistor supplies a bias signal to an amplifier. The filter circuit is connected between a collector terminal of the first bipolar transistor and the ground through a base terminal of the first bipolar transistor. The filter circuit has frequency characteristics for attenuating a high frequency component of an RF signal to be input to the amplifier.