The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 2021
Filed:
Jun. 04, 2019
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Dong-jae Shin, Seoul, KR;
Dong-hyun Kim, Cheonan-si, KR;
Seong-gu Kim, Pyeongtaek-si, KR;
In-sung Joe, Seoul, KR;
Kyoung-ho Ha, Seoul, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/02 (2006.01); H01S 5/20 (2006.01); G02B 6/12 (2006.01); H01S 5/10 (2006.01); H01S 5/22 (2006.01); H01S 5/026 (2006.01); H01S 5/042 (2006.01); H01S 5/14 (2006.01); H01S 5/223 (2006.01); H01S 5/227 (2006.01); H01S 5/343 (2006.01);
U.S. Cl.
CPC ...
H01S 5/2031 (2013.01); G02B 6/12 (2013.01); H01S 5/1032 (2013.01); G02B 2006/12061 (2013.01); G02B 2006/12121 (2013.01); H01S 5/021 (2013.01); H01S 5/026 (2013.01); H01S 5/0422 (2013.01); H01S 5/14 (2013.01); H01S 5/141 (2013.01); H01S 5/22 (2013.01); H01S 5/227 (2013.01); H01S 5/2232 (2013.01); H01S 5/34306 (2013.01);
Abstract
Hybrid silicon lasers are provided including a bulk silicon substrate, a localized insulating layer that extends on at least a portion of the bulk silicon substrate, an optical waveguide structure on an upper surface of the localized insulating layer. The optical waveguide structure includes an optical waveguide including a silicon layer. A lasing structure is provided on the optical waveguide structure.