The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 02, 2021

Filed:

Jun. 25, 2019
Applicants:

Xiamen Sanan Integrated Circuit Co., Ltd., Xiamen, CN;

Sanan Optoelectronics Hong Kong Company Limited, Queensway, HK;

Inventors:

Babu Dayal Padullaparthi, Queensway, HK;

Pohan Chen, Xiamen, CN;

Liqin Qiu, Xiamen, CN;

Jiarui Fei, Xiamen, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/183 (2006.01); G02B 27/48 (2006.01);
U.S. Cl.
CPC ...
H01S 5/18361 (2013.01); G02B 27/48 (2013.01); H01S 5/18305 (2013.01); H01S 5/18308 (2013.01); H01S 5/18347 (2013.01);
Abstract

A vertical-cavity surface-emitting laser (VCSEL) device includes a substrate, first and second-type doped distributed Bragg reflectors, first and second electrodes, an active layer, a surface relief layer having a surface relief indentation of a diameter (d) ranging from 1.0-6.0 um, and a confinement member defining an aperture with a diameter (d) ranging from 3.0-15 μm. The second electrode is a ring-shaped p-contact metal having an inner diameter (d) ranging from 8-17 μm. The VCSEL device has a mesa structure that has a bottom mesa diameter (d) ranging from 16-28 μm. The diameters satisfy the relation of d>d>d>d. The surface relief layer has a thickness equaling to n/4 times a wavelength of a laser beam generated by the active layer with n being positive even numbers.


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