The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 02, 2021

Filed:

Aug. 31, 2011
Applicants:

Laurent Vandroux, Le Cheylas, FR;

Léa Di Cioccio, Saint Ismier, FR;

Pierric Gueguen, Echirolles, FR;

Inventors:

Laurent Vandroux, Le Cheylas, FR;

Léa Di Cioccio, Saint Ismier, FR;

Pierric Gueguen, Echirolles, FR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01R 43/02 (2006.01); H01L 21/02 (2006.01); H01L 25/00 (2006.01); H01L 23/00 (2006.01); H01L 21/20 (2006.01); H01L 21/18 (2006.01);
U.S. Cl.
CPC ...
H01R 43/02 (2013.01); H01L 21/02068 (2013.01); H01L 21/02074 (2013.01); H01L 21/185 (2013.01); H01L 21/2007 (2013.01); H01L 24/05 (2013.01); H01L 24/08 (2013.01); H01L 24/80 (2013.01); H01L 25/50 (2013.01); C09J 2301/416 (2020.08); C09J 2400/163 (2013.01); H01L 2224/0381 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05546 (2013.01); H01L 2224/05571 (2013.01); H01L 2224/05576 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/05687 (2013.01); H01L 2224/05688 (2013.01); H01L 2224/08121 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/13099 (2013.01); H01L 2224/8002 (2013.01); H01L 2224/80012 (2013.01); H01L 2224/80013 (2013.01); H01L 2224/80097 (2013.01); H01L 2224/80357 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01); H01L 2224/80905 (2013.01); H01L 2224/94 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/01023 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01058 (2013.01); H01L 2924/01079 (2013.01);
Abstract

A method for bonding a first surface provided with at least one copper area surrounded by a silicon oxide area to a second surface includes an operation of treatment of the first surface by a plasma, before placing the first surface in contact with the second surface. The plasma is formed from a gas source containing a silicon oxide nitriding agent and a copper oxide reducing agent containing hydrogen. The gas source may include an Nand NHand/or Hgas mixture or a NO and Hgas mixture, or ammonia, which is then used both as a nitriding agent and as a reducing agent. The plasma obtained from this gas source then necessarily contains nitrogen and hydrogen, which enables, in a single operation, to provide a high-performance bonding between the first and second surfaces.


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