The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 02, 2021

Filed:

May. 10, 2018
Applicant:

Samsung Display Co., Ltd., Yongin-si, KR;

Inventors:

Jun Chun, Hwaseong-si, KR;

Jin-Su Byun, Seoul, KR;

Bo Geon Jeon, Hwaseong-si, KR;

Jun Gi Kim, Hwaseong-si, KR;

Jeong Min Park, Seoul, KR;

Yang-Ho Jung, Seoul, KR;

Seon Hwa Choi, Suwon-si, KR;

Assignee:

SAMSUNG DISPLAY CO., LTD., Yongin-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/00 (2006.01); H01L 51/52 (2006.01); H01L 33/36 (2010.01); H01L 27/32 (2006.01);
U.S. Cl.
CPC ...
H01L 51/5206 (2013.01); H01L 27/3258 (2013.01); H01L 27/3262 (2013.01); H01L 33/36 (2013.01); H01L 51/5209 (2013.01); H01L 2251/558 (2013.01);
Abstract

A light emitting device includes a substrate. A thin film transistor is disposed on the substrate. A first electrode is connected to the thin film transistor. A second electrode at least partially overlaps the first electrode. A first partition wall is disposed between the first electrode and the second electrode. An insulating layer is disposed between the thin film transistor and the first electrode. The insulating layer includes a first part having a first thickness and a second part having a second thickness that is different than the first thickness. The second part of the insulating layer at least partially overlaps the first partition wall.


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