The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 02, 2021

Filed:

Dec. 21, 2018
Applicant:

Facebook Technologies, Llc, Menlo Park, CA (US);

Inventors:

Daniel Brodoceanu, Cork, IE;

David Massoubre, Cork, IE;

Karsten Moh, Blieskastel, DE;

Assignee:

FACEBOOK TECHNOLOGIES, LLC, Menlo Park, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/24 (2010.01); H01L 33/58 (2010.01); H01L 33/32 (2010.01); H01L 27/15 (2006.01); H01S 5/12 (2006.01); H01S 5/22 (2006.01); H01L 33/00 (2010.01); H01L 33/20 (2010.01); G03F 7/00 (2006.01); H01L 21/027 (2006.01);
U.S. Cl.
CPC ...
H01L 33/0095 (2013.01); G03F 7/0005 (2013.01); H01L 21/0273 (2013.01); H01L 33/0075 (2013.01); H01L 33/20 (2013.01); H01L 33/32 (2013.01);
Abstract

Techniques related to molded etch masks are disclosed. Etch masks can be formed based on pressing a mold against a layer of pliable masking material applied to a surface of an epitaxial layered structure. The epitaxial layered structure includes a first semiconductor layer, a second semiconductor layer, and a light-emitting layer between the first and second semiconductor layers. The epitaxial layered structure is etched using the molded etch masks to form etched structures. The etched structures may be optical structures that modify light emitted through the surface or epitaxial mesas that collimate light within the epitaxial layered structure.


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