The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 2021
Filed:
Nov. 22, 2017
Newsouth Innovations Pty Limited, Sydney, AU;
Alison Ciesla, Cronulla, AU;
Brett Jason Hallam, Bexley, AU;
Catherine Emily Chan, Kensington, AU;
Chee Mun Chong, Bellevue Hill, AU;
Daniel Chen, Bankstown, AU;
Darren Bagnall, Coogee, AU;
David Neil Payne, Redfern, AU;
Ly Mai, East Hills, AU;
Malcolm David Abbott, Naremburn, AU;
Moonyong Kim, Kensington, AU;
Ran Chen, Botany, AU;
Stuart Ross Wenham, Cronulla, AU;
Tsun Hang Fung, Kensington, AU;
Zhengrong Shi, Kirribilli, AU;
NEWSOUTH INNOVATIONS PTY LIMITED, Sydney, AU;
Abstract
The present disclosure is directed to a method for processing a silicon wafer that allows improving performance by exploiting the properties of crystallographic imperfections. The method comprises the steps of: forming a silicon layer with crystallographic imperfections in the proximity of a surface of the silicon; exposing at least a portion of the device to hydrogen atoms in a manner such that hydrogen atoms migrate towards the region with crystallographic imperfections and into the silicon along the crystallographic imperfections; and controlling the charge state of hydrogen atoms located at the crystallographic imperfections to be positive when the imperfections are in a p-type region of the wafer; and negative when the imperfections are at an n-type region of the wafer by thermally treating the silicon while exposing the silicon to an illumination intensity of less than 10 mW/cm.