The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 02, 2021

Filed:

Jan. 23, 2019
Applicant:

Db Hitek Co., Ltd., Seoul, KR;

Inventor:

Choul Joo Ko, Seongnam-si, KR;

Assignee:

DB HITEK CO., LTD., Seouk, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/10 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7816 (2013.01); H01L 29/0649 (2013.01); H01L 29/1095 (2013.01); H01L 29/42356 (2013.01); H01L 29/66681 (2013.01); H01L 29/66689 (2013.01); H01L 29/0653 (2013.01); H01L 29/086 (2013.01); H01L 29/1083 (2013.01);
Abstract

A semiconductor device and a method of manufacturing the same are disclosed. The semiconductor device includes a first body region disposed in a substrate and having a first conductivity type, a second body region disposed on the first body region and having the first conductivity type and a portion protruding in a channel length direction, a source region disposed in the second body region and having a second conductivity type, a drain region spaced apart from the protruding portion of the second body region in the channel length direction and having the second conductivity type, a well region configured to electrically connect the protruding portion of the second body region and the drain region and having the second conductivity type, and a gate structure disposed on the protruding portion of the second body region.


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