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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10910492 B1

PDFFull Text
Date of Patent:
Feb. 02, 2021

Filed:

Jul. 16, 2018

Semiconductor device and method for manufacturing the same

Applicant:

Renesas Electronics Corporation, Tokyo, JP;

Inventors:

Hiroki Fujii, Hitachinaka, JP;

Atsushi Sakai, Tokyo, JP;

Takahiro Mori, Hitachinaka, JP;

Assignee:

RENESAS ELECTRONICS CORPORATION, Tokyo, JP;

Attorney:

McDermott Will & Emery LLP

Primary Examiner:

Jose R Diaz

Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/8238 (2006.01); H01L 21/8234 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/10 (2006.01); H01L 29/08 (2006.01); H01L 27/092 (2006.01); H01L 27/06 (2006.01); H01L 21/8249 (2006.01); H01L 29/732 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7816 (2013.01); H01L 21/823431 (2013.01); H01L 21/823493 (2013.01); H01L 21/823821 (2013.01); H01L 21/823892 (2013.01); H01L 27/092 (2013.01); H01L 29/0653 (2013.01); H01L 29/0878 (2013.01); H01L 29/1083 (2013.01); H01L 29/4238 (2013.01); H01L 29/42376 (2013.01); H01L 29/66681 (2013.01); H01L 29/7834 (2013.01); H01L 29/7835 (2013.01); H01L 29/7851 (2013.01); H01L 21/8249 (2013.01); H01L 27/0623 (2013.01); H01L 27/0922 (2013.01); H01L 29/7322 (2013.01);
Abstract

A semiconductor device which can secure a high breakdown voltage and to which a simplified manufacturing process is applicable and a method for manufacturing the semiconductor device are provided. An nburied region has a floating potential. An n-type body region is located on a first surface side of the nburied region. A psource region is located in the first surface and forms a p-n junction with the n-type body region. A pdrain region is located in the first surface spacedly from the psource region. A p-type impurity region PIR is located between the nburied region and the n-type body region and isolates the nburied region and the n-type body region from each other.

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