The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 2021
Filed:
Sep. 03, 2019
Toshiba Memory Corporation, Minato-ku, JP;
Keiichi Sawa, Yokkaichi, JP;
Kazuhiro Matsuo, Kuwana, JP;
Kazuhisa Matsuda, Yokkaichi, JP;
Hiroyuki Yamashita, Yokkaichi, JP;
Yuta Saito, Yokkaichi, JP;
Shinji Mori, Nagoya, JP;
Masayuki Tanaka, Yokkaichi, JP;
Kenichiro Toratani, Kuwana, JP;
Atsushi Takahashi, Yokkaichi, JP;
Shouji Honda, Kuwana, JP;
TOSHIBA MEMORY CORPORATION, Minato-ku, JP;
Abstract
In one embodiment, a semiconductor device includes a substrate, insulating films and first films alternately stacked on the substrate, at least one of the first films including an electrode layer and a charge storage layer provided on a face of the electrode layer via a first insulator, and a semiconductor layer provided on a face of the charge storage layer via a second insulator. The device further includes at least one of a first portion including nitrogen and provided between the first insulator and the charge storage layer with an air gap provided in the first insulator, a second portion including nitrogen, provided between the charge storage layer and the second insulator, and including a portion protruding toward the charge storage layer, and a third portion including nitrogen and provided between the second insulator and the semiconductor layer with an air gap provided in the first insulator.