The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 02, 2021

Filed:

Aug. 27, 2019
Applicant:

Toshiba Memory Corporation, Minato-ku, JP;

Inventors:

Takayuki Hashimoto, Kuwana, JP;

Ayaha Hachisuga, Yokkaichi, JP;

Jun Nishimura, Kuwana, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11556 (2017.01); H01L 27/11524 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11556 (2013.01); H01L 27/11524 (2013.01);
Abstract

A semiconductor memory device comprises a substrate, first semiconductor films extending in a first direction crossing a surface of the substrate and arranged in a second direction and in a third direction, a conductive layer which covers peripheral faces of the first semiconductor films on a cross-section crossing the first direction, and a contact which extends in the first direction. Here, when straight lines disposed at equal intervals in the second direction on the cross-section and perpendicular to the second direction are defined as first to third straight lines, a first number of the first semiconductor films are provided on the first straight line, a second number less than the first number of the first semiconductor films are provided on the second straight line, a third number less than the second number of the first semiconductor films are provided on the third straight line.


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