The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 2021
Filed:
Sep. 19, 2019
Powerchip Semiconductor Manufacturing Corporation, Hsinchu, TW;
Chun-Sheng Chen, Taipei, TW;
Powerchip Semiconductor Manufacturing Corporation, Hsinchu, TW;
Abstract
A circuit structure including a first gate structure, a first multi-connected channel layer and a second transistor is provided. The first gate structure has a first extension direction, and the first gate structure has a first end and a second end opposite to each other. The first gate structure is fully surrounded by the first multi-connected channel layer, and a plane direction of the multi-connected channel layer is perpendicular to the first extension direction. The first gate structure and the first multi-connected channel layer form a first transistor. The second transistor is disposed in the first multi-connected channel layer. A second gate structure or a channel of the second transistor is electrical connected to the first multi-connected channel layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile