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For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10910363 B1

PDFFull Text
Date of Patent:
Feb. 02, 2021

Filed:

Feb. 28, 2019

Semiconductor device

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Kiseok Lee, Hwaseong-si, KR;

Chan-Sic Yoon, Anyang-si, KR;

Dongoh Kim, Daegu, KR;

Myeong-Dong Lee, Seoul, KR;

Assignee:

Samsung Electronics Co., Ltd., Gyeonggi-do, KR;

Attorney:

Harness, Dickey & Pierce, P.L.C.

Primary Examiner:

Calvin Y Choi

Int. Cl.
CPC ...
H01L 21/70 (2006.01); H01L 27/06 (2006.01); H01L 21/8238 (2006.01); H01L 21/768 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/49 (2006.01); H01L 27/24 (2006.01); H01L 27/108 (2006.01); H01L 27/22 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0617 (2013.01); H01L 21/76831 (2013.01); H01L 21/76832 (2013.01); H01L 21/823821 (2013.01); H01L 21/823842 (2013.01); H01L 21/823878 (2013.01); H01L 29/4966 (2013.01); H01L 29/66545 (2013.01); H01L 29/7851 (2013.01); H01L 27/108 (2013.01); H01L 27/22 (2013.01); H01L 27/2436 (2013.01);
Abstract

Disclosed is a semiconductor device comprising a substrate including a first region and a second region, a first gate pattern on the substrate of the first region, and a second gate pattern on the substrate of the second region. The first gate pattern comprises a first high-k dielectric pattern, a first N-type metal-containing pattern, and a first P-type metal-containing pattern that are sequentially stacked. The second gate pattern comprises a second high-k dielectric pattern and a second P-type metal-containing pattern that are sequentially stacked.

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