The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 02, 2021

Filed:

Jan. 24, 2019
Applicant:

Microsoft Technology Licensing, Llc, Redmond, WA (US);

Inventors:

Mark Thomas McCormack, Livermore, CA (US);

Louis Charles Kordus, II, Los Altos, CA (US);

Anik Mehta, Livermore, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); G01N 33/20 (2019.01);
U.S. Cl.
CPC ...
H01L 22/14 (2013.01); G01N 33/20 (2013.01); H01L 22/12 (2013.01); H01L 22/20 (2013.01);
Abstract

A method for validating that an integrated circuit die is not susceptible to a conductive metallic ion diffusion defect is disclosed. A test component is applied to a backside surface of the integrated circuit die to form a test assembly. The test component includes a conductive metal layer and a transport media layer for facilitating diffusion of conductive metallic ions. The test assembly is heated at a thermal activation temperature. The integrated circuit die is computer validated to determine whether or not the integrated circuit die has the conductive metallic ion diffusion defect.


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