The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 2021
Filed:
Sep. 04, 2019
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
You-Jin Jung, Hwaseong-si, KR;
Masayuki Terai, Seongnam-si, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/82 (2006.01); H01L 21/8239 (2006.01); H01L 45/00 (2006.01); H01L 21/8229 (2006.01);
U.S. Cl.
CPC ...
H01L 21/8239 (2013.01); H01L 21/8229 (2013.01); H01L 45/1675 (2013.01);
Abstract
A variable resistance memory device includes a memory unit including a first electrode, a variable resistance pattern and a second electrode sequentially stacked on a substrate, a first selection structure on the memory unit, a third electrode structure on the first selection structure, and an anti-fuse including a fourth electrode, a second selection structure and a fifth electrode structure sequentially stacked. The fourth electrode directly contacts the second selection structure, and a bottom of the fourth electrode is lower than a bottom of the second electrode.