The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 02, 2021

Filed:

Oct. 17, 2019
Applicant:

Hitachi High-tech Corporation, Tokyo, JP;

Inventor:

Yoshihide Yamaguchi, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/67 (2006.01); H01L 21/311 (2006.01); H01L 21/28 (2006.01); H01L 29/51 (2006.01); H01L 21/02 (2006.01); C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31122 (2013.01); H01L 21/02181 (2013.01); H01L 21/02183 (2013.01); H01L 21/02186 (2013.01); H01L 21/02189 (2013.01); H01L 21/02192 (2013.01); H01L 21/28185 (2013.01); H01L 21/31144 (2013.01); H01L 21/67017 (2013.01); H01L 21/6719 (2013.01); H01L 21/67069 (2013.01); H01L 29/517 (2013.01); C23C 16/45559 (2013.01);
Abstract

Provided is a semiconductor manufacturing apparatus including: a container in which a processing chamber is installed; a stage installed in the processing chamber and configured to hold a semiconductor substrate; a gas supply line configured to supply reactive gas to the processing chamber; and a vacuum line configured to exhaust the processing chamber, wherein the semiconductor substrate includes a high-k insulating film, and as the reactive gas, mixed gas including complex-forming gas forming a volatile organometallic complex by reacting with a metal element included in the high-k insulating film and complex stabilizing material gas that increases stability of the organometallic complex is supplied.


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