The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 02, 2021

Filed:

Mar. 18, 2019
Applicant:

El-mul Technologies Ltd., Rehovot, IL;

Inventors:

Eli Cheifetz, Ramat Gan, IL;

Amit Weingarten, Ramat Gan, IL;

Semyon Shopman, Kiryat Ekron, IL;

Silviu Reinhorn, Mevaseret Zion, IL;

Dmitry Shur, Holon, IL;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/244 (2006.01); H01J 37/22 (2006.01); H01J 37/26 (2006.01);
U.S. Cl.
CPC ...
H01J 37/244 (2013.01); H01J 37/226 (2013.01); H01J 37/26 (2013.01); H01J 2237/2443 (2013.01); H01J 2237/2445 (2013.01);
Abstract

An electron detector assembly configured for detecting electrons emitted from a sample irradiated by an electron beam, including a scintillator configured with a scintillator layer formed with a scintillating surface. The scintillator layer emits light signals corresponding to impingement of electrons upon the scintillating surface. A light guide plate is coupled to the scintillator layer and includes a peripheral surface. One or more silicon photomultiplier devices are positioned upon the peripheral surface, wherein one or more silicon photomultiplier devices are arranged perpendicularly or obliquely relative to the scintillating surface. The silicon photomultiplier device is configured to yield an electrical signal from an electron impinging upon the scintillator surface.


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