The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 02, 2021

Filed:

Mar. 04, 2016
Applicant:

University of Technology Sydney, Ultimo, AU;

Inventors:

Mohsin Ahmed, Narayangong, BD;

Francesca Iacopi, West End, AU;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01G 11/36 (2013.01); H01G 11/26 (2013.01); H01G 11/56 (2013.01); C01B 32/184 (2017.01); C23C 14/18 (2006.01); C23C 14/58 (2006.01); C23C 16/32 (2006.01); H01G 11/86 (2013.01); H01G 11/28 (2013.01); H01G 11/68 (2013.01); H01G 11/32 (2013.01); C23C 14/34 (2006.01); C23C 28/00 (2006.01); C23F 1/30 (2006.01); C30B 25/18 (2006.01); C30B 29/36 (2006.01); H01G 11/34 (2013.01); B82Y 30/00 (2011.01); B82Y 40/00 (2011.01);
U.S. Cl.
CPC ...
H01G 11/36 (2013.01); C01B 32/184 (2017.08); C23C 14/185 (2013.01); C23C 14/34 (2013.01); C23C 14/5806 (2013.01); C23C 14/5873 (2013.01); C23C 16/325 (2013.01); C23C 28/322 (2013.01); C23C 28/341 (2013.01); C23F 1/30 (2013.01); C30B 25/18 (2013.01); C30B 29/36 (2013.01); H01G 11/26 (2013.01); H01G 11/28 (2013.01); H01G 11/32 (2013.01); H01G 11/34 (2013.01); H01G 11/68 (2013.01); H01G 11/86 (2013.01); B82Y 30/00 (2013.01); B82Y 40/00 (2013.01); H01G 11/56 (2013.01); Y02E 60/13 (2013.01); Y10S 977/734 (2013.01); Y10S 977/842 (2013.01); Y10S 977/948 (2013.01);
Abstract

A process for forming high surface area graphene structures includes: depositing at least one metal on a surface of silicon carbide; heating the at least one metal and the silicon carbide to cause at least one of the metals to react with a portion of the silicon carbide to form silicide regions extending into an unreacted portion of the silicon carbide and graphene disposed between the silicide regions and the unreacted portion of the silicon carbide; and removing the silicide regions to provide a silicon carbide structure having a highly irregular surface and a surface layer of graphene.


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