The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 02, 2021

Filed:

Oct. 29, 2019
Applicant:

Shenzhen Weitongbo Technology Co., Ltd., Shenzhen, CN;

Inventors:

Bin Lu, Shenzhen, CN;

Jian Shen, Shenzhen, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01G 4/01 (2006.01); H01L 21/768 (2006.01); H01L 21/306 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01G 4/01 (2013.01); H01L 21/30608 (2013.01); H01L 21/7687 (2013.01); H01L 21/7688 (2013.01); H01L 28/86 (2013.01); H01L 28/88 (2013.01);
Abstract

A capacitor and a method of fabricating the capacitor are provided. The capacitor includes a structure for forming a three-dimensional capacitor, the structure being a pillar structure or a trench structure; where when the structure is a pillar structure, the aspect ratio of the pillar structure is more than 10; when the structure is a trench structure, the capacitor further includes a substrate, the trench structure is formed by a material layer disposed on the surface of a base trench of the substrate, and the aspect ratio of the trench structure is more than 10. The aspect ratio of the pillar structure of the capacitor or the aspect ratio of the trench structure may be more than 10, so that the performance of the capacitor is better.


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