The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 02, 2021

Filed:

Jan. 02, 2020
Applicant:

SK Hynix Inc., Gyeonggi-do, KR;

Inventors:

Cho Rong Park, Chungcheongbuk-do, KR;

Cheol Joong Park, Gyeonggi-do, KR;

Assignee:

SK hynix Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/14 (2006.01); G11C 16/04 (2006.01); G11C 16/34 (2006.01); G06F 3/06 (2006.01);
U.S. Cl.
CPC ...
G11C 16/14 (2013.01); G06F 3/0604 (2013.01); G06F 3/0652 (2013.01); G06F 3/0659 (2013.01); G06F 3/0679 (2013.01); G11C 16/0483 (2013.01); G11C 16/3445 (2013.01);
Abstract

A memory device having an improved threshold voltage distribution includes: a memory block including a plurality of memory cells; a peripheral circuit configured to perform an erase operation on the memory block; and control logic configured to: control the peripheral circuit to suspend the erase operation in response to a suspend command received from an external source, determine an erase state of the plurality of memory cells by using a plurality of erase state verify voltages in response to a resume command received subsequently to the suspend command, and determine a level of an erase voltage to be applied to the memory block and an erase voltage applying time for which the erase voltage is to be applied based on the determination result.


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