The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 2021
Filed:
Jan. 12, 2018
Samsung Electronics Co., Ltd., Suwon-si, KR;
Ki-soo Kim, Hwaseong-si, KR;
No-young Chung, Hwaseong-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
An optical proximity correction (OPC) method includes preparing basic data for OPC, measuring with a scanning electron microscope (SEM) an after development inspection (ADI) critical dimension (CD) of a photoresist (PR) pattern with respect to a sample, measuring with the SEM an after cleaning inspection (ACI) CD of a wafer pattern formed using the PR pattern, generating CD data of the sample reflecting PR shrinking caused by the SEM measurement by using the measured ADI CD of the PR pattern and the measured ACI CD of the wafer pattern; and generating an OPC model based on the basic data and the CD data of the sample.