The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 02, 2021

Filed:

Jul. 12, 2019
Applicant:

National Technology & Engineering Solutions of Sandia, Llc, Albuquerque, NM (US);

Inventors:

Michael Wood, Albuquerque, NM (US);

Salvatore Campione, Albuquerque, NM (US);

Gordon Arthur Keeler, Falls Church, VA (US);

Kent M. Geib, Elbert, CO (US);

Joshua Shank, Albuquerque, NM (US);

Jon Ihlefeld, Charlottesville, VA (US);

Darwin K. Serkland, Albuquerque, NM (US);

Ting S. Luk, Albuquerque, NM (US);

Isak C. Reines, Albuquerque, NM (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/025 (2006.01); G02F 1/01 (2006.01); G02F 1/00 (2006.01); G02F 1/015 (2006.01);
U.S. Cl.
CPC ...
G02F 1/025 (2013.01); G02F 1/0018 (2013.01); G02F 1/0102 (2013.01); G02F 2001/0157 (2013.01);
Abstract

A method of optical modulation in a non-resonant epsilon-near-zero (EMZ) plasmonic electro-optical modulator is provided. An optical carrier is injected into a waveguide optically coupled to a layer of transparent conductive material having an epsilon-near-zero (ENZ) wavelength. The transparent conductive material layer constitutes a portion of a capacitive structure that includes a gate dielectric layer. A time-varying bias voltage applied across the gate dielectric layer shifts the ENZ wavelength toward the carrier wavelength, and thereby impresses a phase modulation pattern on the carrier wave.


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