The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 2021
Filed:
Aug. 19, 2014
AK Optics Technology Co., Ltd., Beijing, CN;
Dong Yan, Beijing, CN;
Chengmin Li, Beijing, CN;
Linzi Wang, Beijing, CN;
Jianpeng Liu, Beijing, CN;
Longmao Ye, Beijing, CN;
AK OPTICS TECHNOLOGY CO., LTD., Beijing, CN;
Abstract
An apparatus and a method for online and real-time detection of a temperature of an epitaxial wafer () belong to the technical field of semiconductor detection. The apparatus comprises a MOCVD reaction chamber (), a light source (), a beam splitter (), a reference light detector (), a reflected light detector () and a data acquisition unit (). The method, on the basis of the apparatus, can obtain a thermal radiation attenuation factor caused by a coating of a reactor chamber window and a reflectance attenuation factor caused by the coating of the reactor chamber window for the epitaxial wafer (). The apparatus and method can eliminate influence of the coating of the reactor chamber window on an online and real-time temperature detection value, thereby improving the accuracy of the online and real-time temperature detection value.