The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 26, 2021

Filed:

Jan. 30, 2020
Applicant:

Murata Manufacturing Co., Ltd., Kyoto, JP;

Inventor:

Kenta Seki, Kyoto, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/693 (2006.01); H04B 1/48 (2006.01);
U.S. Cl.
CPC ...
H03K 17/693 (2013.01); H04B 1/48 (2013.01);
Abstract

A length of a zone in which a power propagation direction from an input/output terminal (P) toward a common terminal (P) and a power propagation direction from the common terminal (P) toward an external connection terminal (P) are opposite to each other is longer than a length of a zone in which a power propagation direction from an input/output terminal (P) toward the common terminal (P) and a power propagation direction from the common terminal (P) toward the external connection terminal (P) are opposite to each other. A FET () and a FET () have structures that power transferred between a drain and a source of the FET () in accordance with predetermined input power is greater than power transferred between a drain and a source of the FET ().


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