The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 2021
Filed:
Aug. 14, 2019
Qorvo Us, Inc., Greensboro, NC (US);
Yan Guo, Santa Clara, CA (US);
Patrick T. Clancy, Santa Cruz, CA (US);
Qorvo US, Inc., Greensboro, NC (US);
Abstract
A complementary metal-oxide semiconductor (CMOS) compatible radio frequency (RF) switch circuit and high voltage control circuit (HVCC) are disclosed. In a mobile device, an RF switch circuit couples a first RF circuit to a shared antenna through a low resistance path while electrically isolating other RF circuits from the antenna by a high resistance path. Each path in the RF switch circuit includes a series metal-oxide semiconductor (MOS) Field-Effect Transistor (FET) MOSFET switch which provides a low resistance path when fully turned on by a strong positive gate-to-source voltage and a corresponding body bias voltage, and a high resistance path when fully turned off by a strong negative gate-to-source voltage and corresponding body bias voltage. The RF switch circuit paths are controlled by a CMOS compatible HVCC which supplies high and low voltage signals to the gate node and body bias node of each MOSFET in each path.