The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 2021
Filed:
Feb. 20, 2019
Applicant:
Rafael Microelectronics, Inc., Hsinchu County, TW;
Inventors:
Chih-Wen Wu, Hsinchu County, TW;
Szu-Yao Chu, Hsinchu County, TW;
Assignee:
Rafael Microelectronics, Inc., Hsinchu County, TW;
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/04 (2006.01); H03F 1/02 (2006.01); H03F 3/213 (2006.01); H03F 1/30 (2006.01);
U.S. Cl.
CPC ...
H03F 1/0261 (2013.01); H03F 3/213 (2013.01); H03F 1/302 (2013.01); H03F 2200/18 (2013.01); H03F 2200/451 (2013.01);
Abstract
A bias circuit for supplying a bias current to an RF power amplifier by using a field-effect transistor (FET) that is controlled by a logic control signal, such as a CMOS logic control signal, for turning on or turning off the bias current supplied to the RF power amplifier, wherein the bias current will be supplied to the RF power amplifier when the FET is on, and the bias current will not be supplied to the RF power amplifier when the FET is off.