The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 26, 2021

Filed:

Sep. 27, 2019
Applicant:

Soraa Laser Diode, Inc., Goleta, CA (US);

Inventors:

Melvin McLaurin, Santa Barbara, CA (US);

James W. Raring, Santa Barbara, CA (US);

Alexander Sztein, Santa Barbara, CA (US);

Po Shan Hsu, Goleta, CA (US);

Assignee:

Soraa Laser Diode, Inc., Goleta, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/343 (2006.01); H01S 5/22 (2006.01); H01S 5/02 (2006.01); H01S 5/20 (2006.01); H01S 5/32 (2006.01); H01S 5/00 (2006.01); H01S 5/022 (2006.01); H01S 5/40 (2006.01);
U.S. Cl.
CPC ...
H01S 5/34333 (2013.01); H01S 5/0215 (2013.01); H01S 5/0217 (2013.01); H01S 5/2081 (2013.01); H01S 5/22 (2013.01); H01S 5/3202 (2013.01); H01S 5/3211 (2013.01); H01S 5/32025 (2019.08); H01L 2224/18 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48465 (2013.01); H01L 2924/16152 (2013.01); H01L 2924/3512 (2013.01); H01S 5/005 (2013.01); H01S 5/02248 (2013.01); H01S 5/02276 (2013.01); H01S 5/2009 (2013.01); H01S 5/3214 (2013.01); H01S 5/320225 (2019.08); H01S 5/4043 (2013.01); H01S 5/4093 (2013.01); H01S 2301/173 (2013.01); H01S 2301/176 (2013.01);
Abstract

A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch.


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