The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 2021
Filed:
May. 19, 2017
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventor:
Hiroyuki Kawahara, Tokyo, JP;
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/026 (2006.01); H01S 5/34 (2006.01); H01S 5/343 (2006.01);
U.S. Cl.
CPC ...
H01S 5/026 (2013.01); H01S 5/3413 (2013.01); H01S 5/34313 (2013.01);
Abstract
There are included: a substrate; a semiconductor laser part formed on the substrate by stacking a plurality of layers including an active layer; and an adjacent part formed on the substrate by stacking a plurality of layers including a core layer, and being an optical modulator or an optical waveguide in contact with the semiconductor laser part through butt joint joining thereto. In a semiconductor device including the semiconductor laser part and the adjacent part which are joined in a butt joint manner, at least a portion, of the semiconductor laser part, that is contact with the adjacent part is disordered.