The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 26, 2021

Filed:

May. 07, 2019
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Praneet Adusumilli, Somerset, NJ (US);

Takashi Ando, Tuckahoe, NY (US);

Jianshi Tang, Elmsford, NY (US);

Ramachandran Muralidhar, Mahopac, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1286 (2013.01); H01L 27/2463 (2013.01); H01L 45/08 (2013.01); H01L 45/1233 (2013.01); H01L 45/1253 (2013.01); H01L 45/146 (2013.01); H01L 45/1683 (2013.01);
Abstract

A method is presented for enabling heat dissipation in resistive random access memory (RRAM) devices. The method includes forming a plurality of conductive lines within an interlayer dielectric (ILD) and forming a RRAM stack over a conductive line of the plurality of conductive lines, the RRAM stack including a bottom electrode, a conductive pillar, thermal conducting layers, and a top electrode. The thermal conducting layers are disposed on opposed ends of the conductive pillar. The thermal conducting layers directly contact the top electrode and the bottom electrode. The thermal conducting layers include aluminum oxide (AlO).


Find Patent Forward Citations

Loading…