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H01L 33/58 (2010.01); H01L 33/10 (2010.01); H01L 33/32 (2010.01); H01L 33/38 (2010.01); H01L 33/46 (2010.01); H01L 33/06 (2010.01); H01L 33/20 (2010.01); H01L 27/15 (2006.01); G08C 23/04 (2006.01);

U.S. Cl.

CPC ...

H01L 33/58 (2013.01); H01L 33/10 (2013.01); H01L 33/32 (2013.01); H01L 33/387 (2013.01); H01L 33/46 (2013.01);

Abstract

An embodiment discloses a semiconductor device comprising: a semiconductor structure comprising a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first electrode disposed on the first conductive semiconductor layer; a 2-1 electrode disposed on the second conductive semiconductor layer; and a 2-2 electrode disposed on the second conductive semiconductor layer and spaced apart from the 2-1 electrode, wherein the thickness of a part of the second conductive semiconductor layer between the 2-1 electrode and the 2-2 electrode is smaller than the thickness of the second conductive semiconductor layer vertically overlapping with the 2-1 electrode and the 2-2 electrode; the 2-2 electrode is opposite to the 2-1 electrode and comprises a first region that is closest to the 2-1 electrode; the 2-1 electrode is opposite to the 2-2 electrode and comprises a second region that is closest to the 2-2 electrode; and the relationship between the width (W) of the first region and the width (W) of the second region is W≥W

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