The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 26, 2021

Filed:

Aug. 20, 2019
Applicants:

International Business Machines Corporation, Armonk, NY (US);

Cambridge Enterprise Ltd., Cambridge, GB;

Inventors:

Michael Engel, Rio de Janeiro, BR;

Mathias B. Steiner, Rio de Janeiro, BR;

Andrea C. Ferrari, Cambridge, GB;

Antonio Lombardo, Papworth Everard, GB;

Matteo Barbone, Munich, DE;

Mete Atature, Cambridge, GB;

Carmen Palacios Berraquero, London, GB;

Dhiren Manji Kara, Potters Bar, GB;

Ilya Goykhman, Technion, IL;

Assignees:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 33/46 (2010.01); H01L 33/06 (2010.01); H01L 33/00 (2010.01); H01L 33/38 (2010.01);
U.S. Cl.
CPC ...
H01L 33/465 (2013.01); H01L 33/005 (2013.01); H01L 33/0041 (2013.01); H01L 33/06 (2013.01); H01L 33/38 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0025 (2013.01);
Abstract

A quantum light emitting device includes a carrier substrate, an insulator, a first semiconductor device, a second semiconductor device, a first contact, and a second contact. The quantum light device includes a carrier substrate comprising silicon and configured with an electrically insulating top surface. The quantum light device also includes an insulator configured on the carrier substrate. The quantum light device includes a first semiconductor structure comprising a first semiconductor material configured on the insulator. Further, the quantum light device includes a second semiconductor structure comprising a second semiconductor material configured on the insulator, with an overlap region of the second semiconductor structure electrically coupling with the first semiconductor structure, a dimensional characteristic of the overlap region being configured to limit a photon emission from the overlap region to a single photon.


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