The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 26, 2021

Filed:

Mar. 07, 2016
Applicant:

Sharp Kabushiki Kaisha, Osaka, JP;

Inventors:

Teruaki Higo, Sakai, JP;

Chikao Okamoto, Sakai, JP;

Naoki Asano, Sakai, JP;

Masamichi Kobayashi, Sakai, JP;

Natsuko Fujiwara, Sakai, JP;

Rihito Suganuma, Sakai, JP;

Toshihiko Sakai, Sakai, JP;

Kazuya Tsujino, Sakai, JP;

Liumin Zou, Sakai, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0352 (2006.01); H01L 31/05 (2014.01); H01L 31/0747 (2012.01); H01L 31/0224 (2006.01); H01L 31/0216 (2014.01);
U.S. Cl.
CPC ...
H01L 31/0352 (2013.01); H01L 31/0224 (2013.01); H01L 31/02167 (2013.01); H01L 31/022441 (2013.01); H01L 31/05 (2013.01); H01L 31/0516 (2013.01); H01L 31/0747 (2013.01); Y02E 10/50 (2013.01);
Abstract

A photovoltaic device includes: a semiconductor substrate stretching in a first direction and a second direction that intersects the first direction; and a first amorphous semiconductor film and a second amorphous semiconductor film both provided on the semiconductor substrate. The second amorphous semiconductor film has a differ conductivity type from the first amorphous semiconductor film. The first amorphous semiconductor film and the second amorphous semiconductor film are divided into a plurality of sections in the first direction and the second direction. Therefore, the photovoltaic device has an improved heat resistance.


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