The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 2021
Filed:
Aug. 13, 2018
Sony Corporation, Tokyo, JP;
Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou, CN;
Tomomasa Watanabe, Kanagawa, JP;
Hiroshi Yoshida, Kanagawa, JP;
Masao Ikeda, Kanagawa, JP;
Shiro Uchida, Tokyo, JP;
Ichiro Nomachi, Kanagawa, JP;
Masayuki Arimochi, Kanagawa, JP;
Hui Yang, Suzhou, CN;
Shulong Lu, Suzhou, CN;
Xinhe Zheng, Suzhou, CN;
Sony Corporation, Tokyo, JP;
Suzhou Institute of Nano-Tech and Nano-Bionics, Suzhou, CN;
Abstract
A light receiving/emitting elementincludes: a light receiving/emitting layerin which a plurality of compound semiconductor layers are stacked; and an electrodehaving a first surfaceA and a second surfaceB and made of a transparent conductive material, in which the second surface faces the first surfaceA, and the electrode is in contact, at the first surfaceA, with the light receiving/emitting layer. The transparent conductive material contains an additive made of one or more metals, or a compound thereof, selected from the group consisting of molybdenum, tungsten, chromium, ruthenium, titanium, nickel, zinc, iron, and copper, and concentration of the additive contained in the transparent conductive material near an interface to the first surfaceA of the electrodeis higher than concentration of the additive contained in the transparent conductive material near the second surfaceB of the electrode