The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 26, 2021

Filed:

Mar. 01, 2019
Applicant:

Lg Electronics Inc., Seoul, KR;

Inventors:

Juhwa Cheong, Seoul, KR;

Yiyin Yu, Seoul, KR;

Youngsung Yang, Seoul, KR;

Yongduk Jin, Seoul, KR;

Manhyo Ha, Seoul, KR;

Seongeun Lee, Seoul, KR;

Assignee:

LG ELECTRONICS INC., Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0216 (2014.01); H01L 31/0224 (2006.01); H01L 31/02 (2006.01);
U.S. Cl.
CPC ...
H01L 31/02167 (2013.01); H01L 31/02008 (2013.01); H01L 31/02168 (2013.01); H01L 31/022425 (2013.01); H01L 31/022433 (2013.01); Y02E 10/50 (2013.01);
Abstract

A solar cell can include a front passivation region including a plurality of layers formed of different materials from each other and including a first aluminum oxide layer and a first silicon nitride layer, and a back passivation region including a plurality of layers formed of different materials from each other and including a second aluminum oxide layer and a second silicon nitride layer, wherein a thickness of a first silicon nitride layer is greater than a thickness of the first aluminum oxide layer, and a thickness of a second silicon nitride layer is greater than a thickness of the second aluminum oxide layer.


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