The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 26, 2021
Filed:
Oct. 23, 2018
Applicant:
Fuji Electric Co., Ltd., Kawasaki, JP;
Inventors:
Assignee:
FUJI ELECTRIC CO., LTD., Kawasaki, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/78 (2006.01); H01L 29/16 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 29/20 (2006.01); H01L 29/739 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7813 (2013.01); H01L 29/0615 (2013.01); H01L 29/0623 (2013.01); H01L 29/0692 (2013.01); H01L 29/086 (2013.01); H01L 29/0878 (2013.01); H01L 29/1095 (2013.01); H01L 29/1608 (2013.01); H01L 29/66068 (2013.01); H01L 29/7803 (2013.01); H01L 29/0696 (2013.01); H01L 29/2003 (2013.01); H01L 29/7397 (2013.01);
Abstract
A vertical MOSFET having a trench gate structure includes an n-type drift layer and a p-type base layer formed by epitaxial growth. In n-type drift layer, an n-type region, a lower second p-type region and a first p-type region are provided. A part of the lower second p-type region extending in a direction opposite that of a depth of the trench and connected to the p-type base layer.