The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 26, 2021

Filed:

Sep. 21, 2018
Applicants:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;

Inventors:

Tomoko Matsudai, Tokyo, JP;

Tsuneo Ogura, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/739 (2006.01); H01L 29/423 (2006.01); H01L 29/06 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7397 (2013.01); H01L 29/0619 (2013.01); H01L 29/407 (2013.01); H01L 29/4236 (2013.01); H01L 29/4238 (2013.01);
Abstract

A semiconductor device according to an embodiment includes a semiconductor layer having a first plane and a second plane; an emitter electrode provided on a first plane side of the semiconductor layer; a collector electrode provided on a second plane side of the semiconductor layer; a first gate electrode pad provided on the first plane side; a second gate electrode pad provided on the first plane side; a cell region including a first trench provided in the semiconductor layer and a first gate electrode that is provided in the first trench and is connected to the first gate electrode pad; and a cell end region that is adjacent to the cell region and includes a second trench provided in the semiconductor layer and a second gate electrode which is provided in the second trench and is connected to the second gate electrode pad.


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